Datasheet ZXMN10A11G - Diodes MOSFET, N, SOT-223

Detailed Description

Manufacturer: Diodes

Description: MOSFET, N, SOT-223

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Docket:
ZXMN10A11G
100V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY V(BR)DSS= 100V; RDS(ON)= 0.35 DESCRIPTION
ID= 2.4A
This new generation of TRENCH MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed.

This makes them ideal for high efficiency, low voltage, power management applications.

Simulation Model

Specifications:

• Continuous Drain Current Id: 1.8 A
• Current Id Max: 2.4 A
• Current Temperature: 25°C
• Drain Source Voltage Vds: 100 V
• Junction Temperature Tj Max: 150°C
• Junction Temperature Tj Min: -55°C
• Mounting Type: SMD
• Number of Pins: 3
• Number of Transistors: 1
• On Resistance Rds(on): 600 MOhm
• On State Resistance Max: 600 MOhm
• Operating Temperature Range: -55°C to +150°C
• Package / Case: SOT-223
• Power Dissipation Pd: 2 W
• Power Dissipation Ptot Max: 2 W
• Pulse Current Idm: 5.8 A
• Rds(on) Test Voltage Vgs: 10 V
• SMD Marking: ZXMN10A11
• SVHC: No SVHC (15-Dec-2010)
• Threshold Voltage Vgs Typ: 4 V
• Transistor Case Style: SOT-223
• Transistor Polarity: N Channel
• Voltage Vds Typ: 100 V
• Voltage Vgs Max: 20 V
• Voltage Vgs Rds on Measurement: 10 V
• Voltage Vgs th Max: 4 V
• Voltage Vgs th Min: 2 V

RoHS: Yes