Datasheet ZXMN3A01F - Diodes MOSFET, N, SOT-23

Detailed Description

Manufacturer: Diodes

Description: MOSFET, N, SOT-23

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Docket:
ZXMN3A01F
30V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY V(BR)DSS = 30V; RDS(ON) = 0.12
ID = 2.0A
DESCRIPTION

Simulation Model

Specifications:

• Continuous Drain Current Id: 2 A
• Current Id Max: 2 A
• Current Temperature: 25°C
• Drain Source Voltage Vds: 30 V
• Junction Temperature Tj Max: 150°C
• Junction Temperature Tj Min: -55°C
• Mounting Type: SMD
• Number of Pins: 3
• Number of Transistors: 1
• On Resistance Rds(on): 120 MOhm
• On State Resistance Max: 120 MOhm
• Package / Case: SOT-23
• Power Dissipation Pd: 625 mW
• Power Dissipation Ptot Max: 625 mW
• Pulse Current Idm: 8 A
• Rds(on) Test Voltage Vgs: 10 V
• SMD Marking: 7N3
• SVHC: No SVHC (15-Dec-2010)
• Threshold Voltage Vgs Typ: 1 V
• Transistor Case Style: SOT-23
• Transistor Polarity: N Channel
• Voltage Vds Typ: 30 V
• Voltage Vgs Max: 1 V
• Voltage Vgs Rds on Measurement: 10 V
• Voltage Vgs th Min: 1 V

RoHS: Yes