Datasheet ZXMN2A03E6 - Diodes MOSFET, N, SOT-23-6

Detailed Description

Manufacturer: Diodes

Description: MOSFET, N, SOT-23-6

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Docket:
ZXMN2A03E6
20V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY V(BR)DSS=20V; RDS(ON)=0.055
D=4.5A
DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed.

This makes them ideal for high efficiency, low voltage, power management applications. FEATURES

Simulation Model

Specifications:

• Continuous Drain Current Id: 4.5 A
• Current Temperature: 25°C
• Drain Source Voltage Vds: 20 V
• Junction Temperature Tj Max: 150°C
• Junction Temperature Tj Min: -55°C
• Mounting Type: SMD
• Number of Pins: 6
• Number of Transistors: 1
• On Resistance Rds(on): 55 MOhm
• On State Resistance Max: 55 MOhm
• Package / Case: SOT-23-6
• Power Dissipation Pd: 1.1 W
• Power Dissipation Ptot Max: 1.1 W
• Pulse Current Idm: 16 A
• Rds(on) Test Voltage Vgs: 4.5 V
• SMD Marking: 2A3
• SVHC: No SVHC (15-Dec-2010)
• Threshold Voltage Vgs Typ: 700 mV
• Transistor Case Style: SOT-23
• Transistor Polarity: N Channel
• Transistor Type: MOSFET
• Voltage Vds Typ: 20 V
• Voltage Vgs Rds on Measurement: 4.5 V
• Voltage Vgs th Min: 700 mV

RoHS: Yes