PDF, 382 Kb, Language: en, File uploaded: Oct 11, 2022, Pages: 6
Dual 60V P-Channel PowerTrench MOSFET
Extract from the document
NDS9948
Dual 60V P-Channel PowerTrench MOSFET
General Description Features This P-Channel MOSFET is a rugged gate version of
Fairchild Semiconductor’s advanced PowerTrench
process. It has been optimized for power management
applications requiring a wide range of gate drive voltage
ratings (4.5V – 20V). • –2.3 A, –60 V Applications • Fast switching speed •
•
• • High performance trench technology for extremely
low RDS(ON) • Low gate charge (9nC typical) Power management
Load switch
Battery protection • High power and current handling capability DD1
DD1 D2
D RDS(ON) = 250 mΩ @ VGS = –10 V
RDS(ON) = 500 mΩ @ VGS = –4.5 V 4 5 DD2 6 3 Q1 2 7 SO-8
Pin 1 SO-8 G2
S2 S G1
S1 G VDSS TA=25oC unless otherwise noted Parameter
Drain-Source Voltage VGSS Gate-Source Voltage ID Drain Current – Continuous (Note 1a) – Pulsed
PD Ratings Units –60 V ±20 V –2.3 A –10 Power Dissipation for Dual Operation 2 Power Dissipation for Single Operation (Note 1a) 1.6 (Note 1b) 1.0 (Note 1c) TJ, TSTG 1 S Absolute Maximum Ratings
Symbol 8 S Q2 Operating and Storage Junction Temperature Range W 0.9
–55 to +175 °C 78 °C/W Thermal Characteristics
RθJA …
