Datasheet NDS9952A - Fairchild MOSFET, NP CH, 30 V, 3.7/-2.9 A, 8SOIC

Detailed Description

Manufacturer: Fairchild

Description: MOSFET, NP CH, 30 V, 3.7/-2.9 A, 8SOIC

Download Data Sheet

Docket:
February 1996
NDS9952A Dual N & P-Channel Enhancement Mode Field Effect Transistor
General Description
These dual N- and P-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
Features

Specifications:

• Continuous Drain Current Id: 3.7 A
• Current Id Max: 3.7 A
• Drain Source Voltage Vds: 30 V
• Mounting Type: SMD
• Number of Pins: 8
• On Resistance Rds(on): 80 MOhm
• Operating Temperature Range: -55°C to +150°C
• Package / Case: SOIC
• Power Dissipation: 2 W
• Rds(on) Test Voltage Vgs: 10 V
• SVHC: No SVHC (19-Dec-2011)
• Threshold Voltage Vgs Typ: 1.7 V
• Transistor Case Style: SOIC
• Transistor Polarity: N and P Channel
• Voltage Vds Typ: 30 V
• Voltage Vgs Max: 1.7 V
• Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes