Datasheet NDT452AP - Fairchild MOSFET, P, SOT-223

Detailed Description

Manufacturer: Fairchild

Description: MOSFET, P, SOT-223

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Docket:
June 1996
NDT452AP P-Channel Enhancement Mode Field Effect Transistor
General Description
Power SOT P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and DC motor control.
Features

Specifications:

• Continuous Drain Current Id: 5 A
• Current Id Max: 5 A
• Current Temperature: 25°C
• Drain Source Voltage Vds: 30 V
• External Depth: 7.3 mm
• External Length / Height: 1.7 mm
• External Width: 6.7 mm
• Full Power Rating Temperature: 25°C
• Mounting Type: SMD
• Number of Pins: 4
• Number of Transistors: 1
• On Resistance Rds(on): 65 MOhm
• Package / Case: SOT-223
• Power Dissipation Pd: 3 W
• Pulse Current Idm: 15 A
• Rds(on) Test Voltage Vgs: -10 V
• SMD Marking: 452 A
• SVHC: No SVHC (15-Dec-2010)
• Tape Width: 12 mm
• Threshold Voltage Vgs Typ: 1.6 V
• Transistor Case Style: SOT-223
• Transistor Polarity: P Channel
• Voltage Vds Typ: 30 V
• Voltage Vgs Max: -1.6 V
• Voltage Vgs Rds on Measurement: 10 V
• Voltage Vgs th Max: -2.8 V

RoHS: Y-Ex