FDD6637
35V P-Channel PowerTrench® MOSFET
General Description Features This P-Channel MOSFET has been produced using • -55 A, -35 V RDS(ON) = 11.6 mΩ @ VGS = -10 V
RDS(ON) = 18 mΩ @ VGS = -4.5 V Fairchild Semiconductor's proprietary PowerTrench
technology to deliver low Rdson and optimized Bvdss • High performance trench technology for extremely capability to offer superior performance benefit in the low RDS(ON) applications. • RoHS Compliant Applications
• Inverter • Power Supplies D D
G
S G D-PAK
TO-252
(TO-252) S Absolute Maximum Ratings
Symbol TA=25oC unless otherwise noted Parameter VDSS Drain-Source Voltage VDS(Avalanche) Drain-Source Avalanche Voltage (maximum) VGSS
ID Gate-Source Voltage
Continuous Drain Current @TC=25°C
@TA=25°C PD Power Dissipation TJ, TSTG (Note 4) Ratings Units -35 V -40 V ±25 V
A (Note 3) -55 (Note 1a) -14
-100 Pulsed (Note 1a) @TC=25°C (Note 3) 57 @TA=25°C (Note 1a) 3.8 @TA=25°C (Note 1b) W 1.6 Operating and Storage Junction Temperature Range -55 to +150 °C
°C/W Thermal Characteristics
RθJC Thermal Resistance, Junction-to-Case (Note 1) 2.2 RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 40 RθJA Thermal Resistance, Junction-to-Ambient (Note 1b) 96 Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape width Quantity FDD6637 FDD6637 D-PAK (TO-252) 13'' 12mm 2500 units ©2005 Fairchild Semiconductor Corporation
FDD6637 Rev C(W) www.fairchildsemi.com FDD6637 35V P-Channel PowerTrench® MOSFET October 2005 Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Drain-Source Avalanche Ratings
EAS
IAS Drain-Source Avalanche Energy
(Single Pulse)
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