Datasheet FDFS6N303 - Fairchild MOSFET, N, SCHOTTKY, SMD, SO-8

Detailed Description

Manufacturer: Fairchild

Description: MOSFET, N, SCHOTTKY, SMD, SO-8

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Docket:
October 2001
FDFS6N303 FETKEY N-Channel MOSFET with Schottky Diode
General Description
Fairchild Semiconductor's FETKEY technology incorporates a high cell density MOSFET and low forward drop (0.35V) Schottky diode into a single surface mount power package.

The MOSFET and Schottky diode are isolated inside the package. The general purpose pinout has been chosen to maximize flexibility and ease of use. FETKEY products are particularly suited for switching applications such as DC/DC buck, boost, synchronous, and non-synchronous converters where the MOSFET is driven as low as 4.5V and fast switching, high efficiency and small PCB footprint is desirable.
Features

Specifications:

• Continuous Drain Current Id: 6 A
• Current Id Max: 30 A
• Drain Source Voltage Vds: 30 V
• Forward Current If(AV): 5 mA
• Forward Voltage VF Max: 500 mV
• Mounting Type: SMD
• Number of Pins: 8
• On Resistance Rds(on): 35 MOhm
• Operating Temperature Range: -55°C to +150°C
• Package / Case: SOIC
• Power Dissipation Pd: 2 mW
• Rds(on) Test Voltage Vgs: 10 V
• SVHC: No SVHC (15-Dec-2010)
• Threshold Voltage Vgs Typ: 1.7 V
• Transistor Case Style: SOIC
• Transistor Polarity: N Channel
• Voltage Vds Typ: 30 V
• Voltage Vgs Max: 20 V
• Voltage Vgs Rds on Measurement: 10 V
• Voltage Vgs th Max: 3 V

RoHS: Yes

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