Datasheet SPI11N60CFD - Infineon MOSFET, N, TO-262
Part Number: SPI11N60CFD
Detailed Description
Manufacturer: Infineon
Description: MOSFET, N, TO-262
Docket:
SPI11N60CFD Cool MOSTM Power Transistor
Feature · New revolutionary high voltage technology · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated · High peak current capability · Intrinsic fast-recovery body diode · Extreme low reverse recovery charge
PG-TO262
VDS @ Tjmax RDS(on) ID
650 0.44 11
Specifications:
- Continuous Drain Current Id: 11 A
- Current Id Max: 11 A
- Drain Source Voltage Vds: 650 V
- Mounting Type: Through Hole
- Number of Pins: 3
- On Resistance Rds(on): 440 MOhm
- Operating Temperature Range: -55°C to +150°C
- Package / Case: TO-220
- Power Dissipation Pd: 125 W
- Rds(on) Test Voltage Vgs: 10 V
- Threshold Voltage Vgs Typ: 4 V
- Transistor Case Style: TO-220
- Transistor Polarity: N Channel
- Transistor Type: Power MOSFET
- Voltage Vds Typ: 650 V
- Voltage Vgs Max: 20 V
- Voltage Vgs Rds on Measurement: 10 V
RoHS: Yes
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