Datasheet IRF7663PBF - International Rectifier MOSFET, P, MICRO-8

Detailed Description

Manufacturer: International Rectifier

Description: MOSFET, P, MICRO-8

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Docket:
PD-91866B
IRF7663
HEXFET® Power MOSFET
q q q q q q
Trench Technology Ultra Low On-Resistance P-Channel MOSFET Very Small SOIC Package Low Profile (<1.1mm) Available in Tape & Reel

Specifications:

• Avalanche Single Pulse Energy Eas: 115mJ
• Capacitance Ciss Typ: 2520 pF
• Charge Qrr @ Tj = 25В°C Typ: 50nC
• Continuous Drain Current Id: 8.2 A
• Current Id Max: -8.2 A
• Current Temperature: 25°C
• Drain Source Voltage Vds: 20 V
• External Depth: 5.03 mm
• External Length / Height: 1.11 mm
• External Width: 3.05 mm
• Full Power Rating Temperature: 25°C
• Gfs Min: 14.5A/V
• Junction Temperature Tj Max: 150°C
• Junction Temperature Tj Min: -55°C
• Lead Spacing: 0.65 mm
• Mounting Type: SMD
• Number of Pins: 8
• Number of Transistors: 1
• On Resistance Rds(on): 20 MOhm
• On State Resistance Max: 20 MOhm
• Operating Temperature Range: -55°C to +150°C
• Package / Case: Micro8
• Power Dissipation Pd: 1.8 W
• Pulse Current Idm: 66 A
• Rds(on) Test Voltage Vgs: -4.5 V
• Reverse Recovery Time trr Typ: 70 ns
• Row Pitch: 4.24 mm
• SMD Marking: 7663
• SVHC: No SVHC (15-Dec-2010)
• Threshold Voltage Vgs Typ: -1.2 V
• Transistor Case Style: MicroSOIC
• Transistor Polarity: P Channel
• Voltage Vds: 20 V
• Voltage Vgs Max: -12 V

RoHS: Yes