Datasheet IRF7853PBF - International Rectifier MOSFET, N, 100 V, SO-8

International Rectifier IRF7853PBF

Part Number: IRF7853PBF

Detailed Description

Manufacturer: International Rectifier

Description: MOSFET, N, 100 V, SO-8

Docket:
PD - 97069
IRF7853PbF
HEXFET® Power MOSFET
Applications Primary Side Switch in Bridge Topology VDSS RDS(on) max ID in Universal Input (36-75Vin) Isolated 100V 18m:@VGS = 10V 8.3A DC-DC Converters l Primary Side Switch in Push-Pull Topology for 18-36Vin Isolated DC-DC A Converters A 1 8 D S l Secondary Side Synchronous 2 7 Rectification Switch for 15Vout S D l Suitable for 48V Non-Isolated 3 6 S D Synchronous Buck DC-DC Applications 4 5 G D Benefits l Low Gate to Drain Charge to Reduce SO-8 Top View Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App.

Note AN1001) l Fully Characterized Avalanche Voltage and Current Absolute Maximum Ratings
l

Specifications:

Cont Current Id @ 25В°C: 8.3 A
Cont Current Id @ 70В°C: 6.6
Continuous Drain Current Id: 8.3 A
Current Id Max: 8.3 A
Drain Source Voltage Vds: 100 V
Mounting Type: SMD
Number of Pins: 8
On Resistance Rds(on): 18 MOhm
Operating Temperature Range: -55°C to +150°C
Package / Case: SOIC
Power Dissipation Pd: 2.5 W
Pulse Current Idm: 66 A
Rds(on) Test Voltage Vgs: 10 V
Rth: 50
SVHC: No SVHC (15-Dec-2010)
Threshold Voltage Vgs Typ: 4.9 V
Transistor Case Style: SOIC
Transistor Polarity: N Channel
Voltage Vds Typ: 100 V
Voltage Vds: 100 V
Voltage Vgs Max: 20 V
Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes