Datasheet IRF9333PBF - International Rectifier MOSFET, P CH, 30 V, 9.2 A, SO-8

Detailed Description

Manufacturer: International Rectifier

Description: MOSFET, P CH, 30 V, 9.2 A, SO-8

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Docket:
PD - 97523
IRF9333PbF
HEXFET® Power MOSFET VDS RDS(on) max
(@VGS = -10V)
-30 19.4 32.5 14 -9.2

Specifications:

• Current Id Max: -9.2 A
• Drain Source Voltage Vds: -30 V
• Number of Pins: 8
• On Resistance Rds(on): 15.6 MOhm
• Operating Temperature Range: -55°C to +150°C
• Power Dissipation Pd: 2.5 W
• Rds(on) Test Voltage Vgs: -10 V
• SVHC: No SVHC (15-Dec-2010)
• Transistor Case Style: SOIC
• Transistor Polarity: P Channel
• Voltage Vgs Max: 20 V

RoHS: Yes

Accessories:

• VISHAY SILICONIX - SI3552DV-T1-E3