Datasheet IRLML2502PBF - International Rectifier MOSFET, N, SOT-23

Detailed Description

Manufacturer: International Rectifier

Description: MOSFET, N, SOT-23

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Docket:
PD - 94892C
IRLML2502PbF
HEXFET® Power MOSFET
l l l l l l l l
Ultra Low On-Resistance N-Channel MOSFET SOT-23 Footprint Low Profile (<1.1mm) Available in Tape and Reel Fast Switching Lead-Free Halogen-Free

Specifications:

• Capacitance Ciss Typ: 740 pF
• Charge Qrr @ Tj = 25В°C Typ: 8.6nC
• Continuous Drain Current Id: 4.2 A
• Current Id Max: 4.2 A
• Current Idss Max: 1 µA
• Current Temperature: 25°C
• Device Marking: IRLML2502PBF
• Drain Source Voltage Vds: 20 V
• External Depth: 2.5 mm
• External Length / Height: 1.12 mm
• External Width: 3.05 mm
• Fall Time tf: 26 s
• Full Power Rating Temperature: 25°C
• Junction Temperature Tj Max: 150°C
• Junction Temperature Tj Min: -55°C
• Mounting Type: SMD
• N-channel Gate Charge: 12nC
• Number of Pins: 3
• Number of Transistors: 1
• On Resistance Rds(on): 45 MOhm
• Package / Case: SOT-23
• Power Dissipation Pd: 1.25 W
• Pulse Current Idm: 33 A
• Rds(on) Test Voltage Vgs: 4.5 V
• Reverse Recovery Time trr Typ: 16 ns
• Rise Time: 10 ns
• SMD Marking: 1 g
• SVHC: No SVHC (15-Dec-2010)
• Tape Width: 8 mm
• Threshold Voltage Vgs Typ: 1.2 V
• Transistor Case Style: SOT-23
• Transistor Polarity: N Channel
• Voltage Vds Typ: 20 V
• Voltage Vgs Max: 1.2 V
• Voltage Vgs Rds on Measurement: 4.5 V
• Voltage Vgs th Max: 1.2 V

RoHS: Yes

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