Datasheet SI4420DYPBF - International Rectifier MOSFET, N, LOGIC, SO-8

Detailed Description

Manufacturer: International Rectifier

Description: MOSFET, N, LOGIC, SO-8

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Docket:
PD - 95729
Si4420DYPbF
HEXFET® Power MOSFET
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N-Channel MOSFET Low On-Resistance Low Gate Charge Surface Mount Logic Level Drive Lead-Free

Specifications:

• Continuous Drain Current Id: 12.5 A
• Current Id Max: 12.5 A
• Current Temperature: 25°C
• Drain Source Voltage Vds: 30 V
• External Depth: 5.2 mm
• External Length / Height: 1.75 mm
• External Width: 4.05 mm
• Full Power Rating Temperature: 25°C
• Mounting Type: SMD
• Number of Pins: 8
• Number of Transistors: 1
• On Resistance Rds(on): 9 MOhm
• Package / Case: SOIC
• Power Dissipation Pd: 2.5 W
• Pulse Current Idm: 50 A
• Rds(on) Test Voltage Vgs: 10 V
• Row Pitch: 6.3 mm
• SMD Marking: SI4420DYPBF
• SVHC: No SVHC (15-Dec-2010)
• Threshold Voltage Vgs Typ: 1 V
• Transistor Case Style: SOIC
• Transistor Polarity: N Channel
• Voltage Vds Typ: 30 V
• Voltage Vgs Max: 1 V
• Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes

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