Datasheet IRF7807VD2PBF - International Rectifier MOSFET, N, FETKY, SO-8

International Rectifier IRF7807VD2PBF

Part Number: IRF7807VD2PBF

Detailed Description

Manufacturer: International Rectifier

Description: MOSFET, N, FETKY, SO-8

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Docket:
PD-95291
IRF7807VD2PbF
· Co-Pack N-channel HEXFET® Power MOSFET and Schottky Diode · Ideal for Synchronous Rectifiers in DC-DC Converters Up to 5A Output · Low Conduction Losses · Low Switching Losses · Low Vf Schottky Rectifier · Lead-Free
FETKY MOSFET / SCHOTTKY DIODE
A/S A/S A/S G

Simulation ModelSimulation Model

Specifications:

  • Continuous Drain Current Id: 8.3 A
  • Current Id Max: 66 A
  • Current Temperature: 25°C
  • Drain Source Voltage Vds: 30 V
  • Forward Current If(AV): 3.7 A
  • Forward Voltage VF Max: 0.54 V
  • Full Power Rating Temperature: 25°C
  • Mounting Type: SMD
  • Number of Pins: 8
  • Number of Transistors: 1
  • On Resistance Rds(on): 17 MOhm
  • Package / Case: SOIC
  • Power Dissipation Pd: 2.5 W
  • Pulse Current Idm: 66 A
  • Rds(on) Test Voltage Vgs: 4.5 V
  • SMD Marking: 807VD2
  • SVHC: No SVHC (15-Dec-2010)
  • Threshold Voltage Vgs Typ: 1 V
  • Transistor Case Style: SOIC
  • Transistor Polarity: N Channel
  • Voltage Vds Typ: 30 V
  • Voltage Vgs Max: 1 V
  • Voltage Vgs Rds on Measurement: 4.5 V
  • Voltage Vgs th Max: 1.2 V
  • Voltage Vgs th Min: 1 V

RoHS: Yes

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