Datasheet IRLR8503PBF - International Rectifier MOSFET, N, 30 V, 49 A, D-PAK

Detailed Description

Manufacturer: International Rectifier

Description: MOSFET, N, 30 V, 49 A, D-PAK

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Docket:
PD- 95095A IRLR8503PbF IRLR8503PbF
· · · · N-Channel Application-Specific MOSFET Ideal for CPU Core DC-DC Converters Low Conduction Losses Minimizes Parallel MOSFETs for high current applications · Lead-Free
HEXFET® MOSFET for DC-DC Converters
D
Description This new device employs advanced HEXFET Power MOSFET technology to achieve very low on-resistance.

The reduced conduction losses makes it ideal for high efficiency DC-DC converters that power the latest generation of microprocessors. The IRLR8503 has been optimized and is 100% tested for all parameters that are critical in synchronous buck converters including RDS(on), gate charge and Cdv/dtinduced turn-on immunity. The IRLR8503 offers an extremely low combination of Qsw & RDS(on) for reduced losses in control FET applications. The package is designed for vapor phase, infra-red, convection, or wave soldering techniques. Power dissipation of greater than 2W is possible in a typical PCB mount application.

Simulation Model

Specifications:

• Alternate Case Style: D-PAK
• Continuous Drain Current Id: 44 A
• Current Id Max: 44 A
• Drain Source Voltage Vds: 30 V
• Junction to Case Thermal Resistance A: 2°C/W
• Mounting Type: SMD
• Number of Pins: 3
• On Resistance Rds(on): 18 MOhm
• On State resistance @ Vgs = 10V: 16 MOhm
• Operating Temperature Range: -55°C to +150°C
• Package / Case: DPAK
• Power Dissipation Pd: 62 W
• Pulse Current Idm: 196 A
• Rds(on) Test Voltage Vgs: 10 V
• SVHC: No SVHC (15-Dec-2010)
• Threshold Voltage Vgs Typ: 1 V
• Transistor Case Style: D-PAK
• Transistor Polarity: N Channel
• Voltage Vds Typ: 30 V
• Voltage Vgs Max: 20 V
• Voltage Vgs Rds on Measurement: 10 V
• Voltage Vgs th Min: 1 V

RoHS: Y-Ex

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• Fischer Elektronik - FK 244 08 D PAK
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• Fischer Elektronik - WLK 5