Datasheet IRF7478QPBF - International Rectifier MOSFET, N SO-8

Detailed Description

Manufacturer: International Rectifier

Description: MOSFET, N SO-8

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Docket:
PD- 96128
SMPS MOSFET
IRF7478QPbF
HEXFET® Power MOSFET
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Specifications:

• Charge Qrr @ Tj = 25В°C Typ: 21nC
• Continuous Drain Current Id: 7.6 A
• Current Id Max: 7 A
• Drain Source Voltage Vds: 60 V
• Mounting Type: SMD
• Number of Pins: 8
• On State Resistance: 26 MOhm
• Operating Temperature Range: -55°C to +150°C
• Package / Case: SOIC
• Power Dissipation Pd: 2.5 W
• Pulse Current Idm: 56 A
• Rds(on) Test Voltage Vgs: 10 V
• SVHC: No SVHC (15-Dec-2010)
• Threshold Voltage Vgs Typ: 3 V
• Transistor Case Style: SOIC
• Transistor Polarity: N Channel
• Voltage Vds Typ: 60 V
• Voltage Vds: 60 V
• Voltage Vgs Max: 20 V
• Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes

Accessories:

• BONKOTE - BON102
• Electrolube - SMA10SL
• Roth Elektronik - RE932-01