Datasheet IRF630NSTRLPBF - International Rectifier N CHANNEL MOSFET, 200 V, 9.3 A D2-PAK

Detailed Description

Manufacturer: International Rectifier

Description: N CHANNEL MOSFET, 200 V, 9.3 A D2-PAK

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Docket:
PD - 94005B
Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements Description
l l Fifth Generation HEXFET ® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability

Specifications:

• Continuous Drain Current Id: 9.3 A
• Drain Source Voltage Vds: 200 V
• On Resistance Rds(on): 300 MOhm
• Rds(on) Test Voltage Vgs: 10 V
• Threshold Voltage Vgs Typ: 4 V
• Transistor Polarity: N Channel

RoHS: Y-Ex