Datasheet IRFSL33N15DPBF - International Rectifier MOSFET, N, D2-PAK

Detailed Description

Manufacturer: International Rectifier

Description: MOSFET, N, D2-PAK

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Docket:
PD- 95537
SMPS MOSFET
IRFB33N15DPbF IRFS33N15DPbF IRFSL33N15DPbF
HEXFET® Power MOSFET
Applications l High frequency DC-DC converters l Lead-Free Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App.

Note AN1001) l Fully Characterized Avalanche Voltage and Current

Specifications:

• Avalanche Single Pulse Energy Eas: 330mJ
• Base Number: 15
• Continuous Drain Current Id: 33 A
• Drain Source Voltage Vds: 150 V
• Fall Time tf: 21 ns
• Junction Temperature Tj Max: 175°C
• Junction Temperature Tj Min: -55°C
• Mounting Type: SMD
• On State Resistance: 56 MOhm
• Package / Case: D2-PAK
• Power Dissipation Pd: 3.8 W
• Pulse Current Idm: 130 A
• Rate of Voltage Change dv / dt: 4.4V/ns
• Repetitive Avalanche Energy Max: 17mJ
• Rise Time: 38 ns
• SVHC: No SVHC (15-Dec-2010)
• Storage Temperature Max: 175°C
• Storage Temperature Min: -55°C
• Threshold Voltage Vgs Typ: 5.5 V
• Transistor Case Style: D2-PAK
• Transistor Polarity: N Channel
• Voltage Vds Typ: 150 V
• Voltage Vds: 150 V
• Voltage Vgs Rds on Measurement: 10 V
• Voltage Vgs th Max: 5.5 V
• Voltage Vgs th Min: 3 V

RoHS: Y-Ex

Accessories:

• Fischer Elektronik - FK 244 08 D2 PAK
• Fischer Elektronik - FK 244 13 D2 PAK
• Fischer Elektronik - WLK 5