Datasheet IXFH12N90P - IXYS MOSFET, N CH, 900 V, 12 A, TO-247

Detailed Description

Manufacturer: IXYS

Description: MOSFET, N CH, 900 V, 12 A, TO-247

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Docket:
Preliminary Technical Information
PolarTM Power MOSFET HiPerFETTM
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXFH12N90P IXFV12N90P IXFV12N90PS
VDSS ID25

Specifications:

• Current Id Max: 12 A
• Drain Source Voltage Vds: 900 V
• Number of Pins: 3
• On State Resistance: 900 MOhm
• Operating Temperature Range: -55°C to +150°C
• Power Dissipation Pd: 380 W
• Rds(on) Test Voltage Vgs: 10 V
• Transistor Case Style: TO-247
• Transistor Polarity: N Channel
• Voltage Vgs Max: 30 V

RoHS: Yes

Accessories:

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• LAIRD TECHNOLOGIES - THER-T-LARGE
• ON Semiconductor - MC33153DG