Datasheet IXFK180N15P - IXYS MOSFET, N, TO-264

IXYS IXFK180N15P

Part Number: IXFK180N15P

Detailed Description

Manufacturer: IXYS

Description: MOSFET, N, TO-264

Docket:
PolarTM HiPerFET Power MOSFET
N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated
Symbol VDSS VDGR VDS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Fc Weight Test Conditions
IXFK 180N15P IXFX 180N15P
VDSS = 150 V ID25 = 180 A RDS(on) 11 m trr 200 ns

Specifications:

Capacitance Ciss Typ: 7000 pF
Continuous Drain Current Id: 180 A
Current Id Max: 180 A
Drain Source Voltage Vds: 150 V
Junction to Case Thermal Resistance A: 0.18°C/W
Mounting Type: Through Hole
N-channel Gate Charge: 240nC
Number of Pins: 3
On State Resistance: 11 MOhm
Operating Temperature Range: -55°C to +175°C
Package / Case: TO-264
Power Dissipation Pd: 830 W
Rds(on) Test Voltage Vgs: 10 V
Reverse Recovery Time trr Max: 200 ns
Threshold Voltage Vgs Typ: 5 V
Transistor Case Style: TO-264
Transistor Polarity: N Channel
Voltage Vds Typ: 150 V
Voltage Vgs Max: 20 V
Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes

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