Datasheet IXFK90N20 - IXYS MOSFET, N, TO-264

Detailed Description

Manufacturer: IXYS

Description: MOSFET, N, TO-264

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Docket:
HiPerFETTM Power MOSFETs
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr
Symbol Test Conditions
VDSS IXFK 90 N 20 IXFN 100 N 20 IXFN 106 N 20
ID25

Specifications:

• Continuous Drain Current Id: 90 A
• Current Id Max: 90 A
• Current Temperature: 25°C
• Drain Source Voltage Vds: 200 V
• Full Power Rating Temperature: 25°C
• Mounting Type: Through Hole
• Number of Pins: 3
• Number of Transistors: 1
• On State Resistance Max: 20 MOhm
• On State Resistance: 23 MOhm
• Operating Temperature Range: -55°C to +150°C
• Package / Case: TO-264
• Power Dissipation Pd: 500 W
• Pulse Current Idm: 360 A
• Rds(on) Test Voltage Vgs: 10 V
• Threshold Voltage Vgs Typ: 4 V
• Transistor Case Style: TO-264
• Transistor Polarity: N Channel
• Voltage Vds Typ: 200 V
• Voltage Vgs Max: 20 V
• Voltage Vgs Rds on Measurement: 10 V
• Voltage Vgs th Max: 4 V

RoHS: Yes

Accessories:

• Panasonic - EYGA091203SM
• Panasonic - EYGA121807A