Datasheet IXFN130N30 - IXYS MOSFET, N, SOT-227B

Detailed Description

Manufacturer: IXYS

Description: MOSFET, N, SOT-227B

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Docket:
HiPerFETTM Power MOSFETs Single Die MOSFET
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr
IXFN 130N30
D
VDSS = 300 V ID25 = 130 A RDS(on) = 22 m trr < 250 ns

Specifications:

• Avalanche Single Pulse Energy Eas: 6J
• Continuous Drain Current Id: 130 A
• Current Id Max: 130 A
• Current Temperature: 25°C
• Drain Source Voltage Vds: 300 V
• Full Power Rating Temperature: 25°C
• Junction Temperature Tj Max: 150°C
• Junction Temperature Tj Min: -55°C
• Mounting Type: Screw
• N-channel Gate Charge: 380nC
• Number of Pins: 4
• Number of Transistors: 1
• On State Resistance Max: 22 MOhm
• On State Resistance: 22 MOhm
• Package / Case: ISOTOP
• Power Dissipation Pd: 700 W
• Pulse Current Idm: 520 A
• Rate of Voltage Change dv / dt: 5V/ns
• Rds(on) Test Voltage Vgs: 10 V
• Repetitive Avalanche Energy Max: 85mJ
• Reverse Recovery Time trr Typ: 250 ns
• Threshold Voltage Vgs Typ: 4 V
• Transistor Case Style: ISOTOP
• Transistor Polarity: N Channel
• Transistor Type: MOSFET
• Voltage Vds Typ: 300 V
• Voltage Vgs Max: 4 V
• Voltage Vgs Rds on Measurement: 10 V
• Voltage Vgs th Max: 4 V
• Weight: 0.000036kg

RoHS: Yes

Accessories:

• Panasonic - EYGA121807A
• SCHRODER - 20900