Datasheet IXFN180N10 - IXYS MOSFET, N, SOT-227B

Detailed Description

Manufacturer: IXYS

Description: MOSFET, N, SOT-227B

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Docket:
HiPerFETTM Power MOSFET
Single MOSFET Die
Preliminary data sheet
IXFN 180N10
VDSS ID25

Specifications:

• Avalanche Single Pulse Energy Eas: 3J
• Continuous Drain Current Id: 180 A
• Current Id Max: 180 A
• Current Temperature: 25°C
• Drain Source Voltage Vds: 100 V
• Full Power Rating Temperature: 25°C
• Isolation Voltage: 2.5 kV
• Junction Temperature Tj Max: 150°C
• Junction Temperature Tj Min: -55°C
• Mounting Type: Screw
• Number of Pins: 4
• Number of Transistors: 1
• On State Resistance Max: 8 MOhm
• On State Resistance: 8 MOhm
• Package / Case: ISOTOP
• Power Dissipation Pd: 600 W
• Pulse Current Idm: 720 A
• Rds(on) Test Voltage Vgs: 10 V
• Repetitive Avalanche Energy Max: 60mJ
• Threshold Voltage Vgs Typ: 4 V
• Transistor Case Style: ISOTOP
• Transistor Polarity: N Channel
• Voltage Vds Typ: 100 V
• Voltage Vgs Max: 4 V
• Voltage Vgs Rds on Measurement: 10 V
• Voltage Vgs th Max: 4 V
• Weight: 0.042kg

RoHS: Yes

Accessories:

• Panasonic - EYGA121807A
• SCHRODER - 20900