Datasheet IXFN180N15P - IXYS MOSFET, N, SOT-227B

IXYS IXFN180N15P

Part Number: IXFN180N15P

Detailed Description

Manufacturer: IXYS

Description: MOSFET, N, SOT-227B

Docket:
PolarHTTM HiPerFET IXFN 180N15P Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
VDSS ID25
RDS(on) trr
= 150 V = 150 A 11 m 200 ns

Specifications:

Capacitance Ciss Typ: 7000 pF
Continuous Drain Current Id: 180 A
Current Id Max: 150 A
Drain Source Voltage Vds: 150 V
Junction to Case Thermal Resistance A: 0.22°C/W
Mounting Type: Screw
N-channel Gate Charge: 240nC
Number of Pins: 4
On State Resistance: 11 MOhm
Operating Temperature Range: -55°C to +175°C
Package / Case: ISOTOP
Power Dissipation Pd: 680 W
Rds(on) Test Voltage Vgs: 10 V
Reverse Recovery Time trr Max: 200 ns
Threshold Voltage Vgs Typ: 5 V
Transistor Case Style: ISOTOP
Transistor Polarity: N Channel
Voltage Vds Typ: 150 V
Voltage Vgs Max: 20 V
Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes

Accessories:

Panasonic - EYGA121807A
SCHRODER - 20900