Datasheet IXFN55N50 - IXYS MOSFET, N, SOT-227B

Detailed Description

Manufacturer: IXYS

Description: MOSFET, N, SOT-227B

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Docket:
HiPerFETTM Power MOSFET
Single Die MOSFET
Preliminary data sheet Symbol Test Conditions
VDSS
ID25 55A 50A 55A 50A

Specifications:

• Continuous Drain Current Id: 55 A
• Current Id Max: 55 A
• Current Temperature: 25°C
• Drain Source Voltage Vds: 500 V
• Full Power Rating Temperature: 25°C
• Isolation Voltage: 2.5 kV
• Junction Temperature Tj Max: 150°C
• Junction Temperature Tj Min: -55°C
• Mounting Type: Screw
• Number of Pins: 3
• Number of Transistors: 1
• On State Resistance Max: 80 MOhm
• On State Resistance: 80 MOhm
• Operating Temperature Range: -55°C to +150°C
• Package / Case: ISOTOP
• Power Dissipation Pd: 600 W
• Pulse Current Idm: 220 A
• Rds(on) Test Voltage Vgs: 10 V
• Repetitive Avalanche Energy Max: 60mJ
• Threshold Voltage Vgs Typ: 4.5 V
• Transistor Case Style: ISOTOP
• Transistor Polarity: N Channel
• Voltage Vds Typ: 500 V
• Voltage Vgs Max: 20 V
• Voltage Vgs Rds on Measurement: 10 V
• Voltage Vgs th Max: 4.5 V
• Weight: 0.046kg

RoHS: Yes

Accessories:

• Panasonic - EYGA121807A
• SCHRODER - 20900