Datasheet IXFN60N60 - IXYS MOSFET, N, SOT-227B

Detailed Description

Manufacturer: IXYS

Description: MOSFET, N, SOT-227B

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Docket:
HiPerFETTM Power MOSFETs Single Die MOSFET
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr
Preliminary data
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg VISOL Md Weight 50/60 Hz, RMS IISOL Ј 1 mA t = 1 min t=1s IS Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC= 25°C, Chip capability TC= 25°C, pulse width limited by TJM TC= 25°C TC= 25°C TC= 25°C Ј IDM, di/dt Ј 100 A/ms, VDD Ј VDSS, TJ Ј 150°C, RG = 2 W TC = 25°C
IXFN 60N60 VDSS ID25

Specifications:

• Avalanche Single Pulse Energy Eas: 4J
• Continuous Drain Current Id: 60 A
• Current Id Max: 60 A
• Current Temperature: 25°C
• Drain Source Voltage Vds: 600 V
• Full Power Rating Temperature: 25°C
• Isolation Voltage: 2.5 kV
• Junction Temperature Tj Max: 150°C
• Junction Temperature Tj Min: -55°C
• Mounting Type: Screw
• Number of Pins: 3
• Number of Transistors: 1
• On State Resistance Max: 75 MOhm
• On State Resistance: 75 MOhm
• Operating Temperature Range: -55°C to +150°C
• Package / Case: ISOTOP
• Power Dissipation Pd: 600 W
• Pulse Current Idm: 240 A
• Rds(on) Test Voltage Vgs: 10 V
• Repetitive Avalanche Energy Max: 64mJ
• Threshold Voltage Vgs Typ: 4.5 V
• Transistor Case Style: ISOTOP
• Transistor Polarity: N Channel
• Voltage Vds Typ: 600 V
• Voltage Vgs Max: 20 V
• Voltage Vgs Rds on Measurement: 10 V
• Voltage Vgs th Max: 4.5 V
• Weight: 0.04kg

RoHS: Yes

Accessories:

• Panasonic - EYGA121807A
• SCHRODER - 20900