Datasheet IXFN60N80P - IXYS MOSFET, N, SOT-227B

IXYS IXFN60N80P

Part Number: IXFN60N80P

Detailed Description

Manufacturer: IXYS

Description: MOSFET, N, SOT-227B

Docket:
PolarHVTM HiPerFET Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXFN 60N80P
= 800 V = 53 A RDS(on) 140 m trr 250 ns
VDSS ID25

Specifications:

Capacitance Ciss Typ: 18000 pF
Continuous Drain Current Id: 60 A
Current Id Max: 53 A
Drain Source Voltage Vds: 800 V
Junction to Case Thermal Resistance A: 0.12°C/W
Mounting Type: Screw
N-channel Gate Charge: 250nC
Number of Pins: 4
On State Resistance: 140 MOhm
Operating Temperature Range: -55°C to +150°C
Package / Case: ISOTOP
Power Dissipation Pd: 1.04 kW
Rds(on) Test Voltage Vgs: 10 V
Reverse Recovery Time trr Max: 250 ns
Threshold Voltage Vgs Typ: 5 V
Transistor Case Style: ISOTOP
Transistor Polarity: N Channel
Voltage Vds Typ: 800 V
Voltage Vgs Max: 30 V
Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes

Accessories:

Panasonic - EYGA121807A
SCHRODER - 20900