Datasheet IXFN64N50P - IXYS MOSFET, N, SOT-227B
Part Number: IXFN64N50P
Detailed Description
Manufacturer: IXYS
Description: MOSFET, N, SOT-227B
Docket:
PolarHVTM HiPerFET Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXFN 64N50P
VDSS = 500 V ID25 = 61 A RDS(on) 85 m trr 200 ns
Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL Md Weight
Specifications:
- Capacitance Ciss Typ: 8700 pF
- Continuous Drain Current Id: 64 A
- Current Id Max: 61 A
- Drain Source Voltage Vds: 500 V
- Junction to Case Thermal Resistance A: 0.18°C/W
- Mounting Type: Screw
- N-channel Gate Charge: 150nC
- Number of Pins: 4
- On State Resistance: 85 MOhm
- Operating Temperature Range: -55°C to +150°C
- Package / Case: ISOTOP
- Power Dissipation Pd: 700 W
- Rds(on) Test Voltage Vgs: 10 V
- Reverse Recovery Time trr Max: 200 ns
- Threshold Voltage Vgs Typ: 5.5 V
- Transistor Case Style: ISOTOP
- Transistor Polarity: N Channel
- Voltage Vds Typ: 500 V
- Voltage Vgs Max: 30 V
- Voltage Vgs Rds on Measurement: 10 V
RoHS: Yes
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- Panasonic - EYGA121807A
- SCHRODER - 20900