Datasheet IXFR36N60P - IXYS MOSFET, N, ISOPLUS247

Detailed Description

Manufacturer: IXYS

Description: MOSFET, N, ISOPLUS247

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Docket:
PolarHVTM HiPerFET Power MOSFET
(Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXFR 36N60P
VDSS ID25
RDS(on) trr

Specifications:

• Capacitance Ciss Typ: 5800 pF
• Continuous Drain Current Id: 20 A
• Current Id Max: 20 A
• Drain Source Voltage Vds: 600 V
• Isolation Voltage: 2.5 kV
• Mounting Type: Through Hole
• N-channel Gate Charge: 102nC
• Number of Pins: 3
• On State Resistance: 200 MOhm
• Operating Temperature Range: -55°C to +150°C
• Package / Case: ISOPLUS-247
• Power Dissipation Pd: 208 W
• Rds(on) Test Voltage Vgs: 10 V
• Reverse Recovery Time trr Max: 200 ns
• Rth: 0.6
• Threshold Voltage Vgs Typ: 5 V
• Transistor Case Style: ISOPLUS-247
• Transistor Polarity: N Channel
• Voltage Vds Typ: 600 V
• Voltage Vgs Max: 30 V
• Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes

Accessories:

• Panasonic - EYGA091203SM
• Panasonic - EYGA121807A