Datasheet IXFV26N50PS - IXYS MOSFET, N, SMD, PLUS220

Detailed Description

Manufacturer: IXYS

Description: MOSFET, N, SMD, PLUS220

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Docket:
PolarHVTM HiPerFET Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 M Continuos Transient TC = 25° C
IXFH 26N50P IXFV 26N50P IXFV 26N50PS
VDSS = ID25 = RDS(on) trr

Specifications:

• Capacitance Ciss Typ: 3600 pF
• Continuous Drain Current Id: 26 A
• Current Id Max: 26 A
• Drain Source Voltage Vds: 500 V
• Junction to Case Thermal Resistance A: 0.31°C/W
• Mounting Type: SMD
• N-channel Gate Charge: 60nC
• Number of Pins: 3
• On State Resistance: 230 MOhm
• Operating Temperature Range: -55°C to +150°C
• Package / Case: PLUS220
• Power Dissipation Pd: 400 W
• Rds(on) Test Voltage Vgs: 10 V
• Reverse Recovery Time trr Max: 200 ns
• Threshold Voltage Vgs Typ: 5.5 V
• Transistor Case Style: PLUS220
• Transistor Polarity: N Channel
• Voltage Vds Typ: 500 V
• Voltage Vgs Max: 30 V
• Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes

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