Datasheet NTE2395 - NTE Electronics MOSFET, N

Detailed Description

Manufacturer: NTE Electronics

Description: MOSFET, N

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Docket:
NTE2395 MOSFET N­Ch, Enhancement Mode High Speed Switch
Features: D Dynamic dv/dt Rating D +175°C Operating Temperature D Fast Switching D Ease of Paralleling D Simple Drive Requirements Absolute Maximum Ratings: Continuous Drain Current (VGS = 10V), ID TC = +25°C (Note 1) .

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A TC = +100°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36A Pulsed Drain Current (Note 2), IDM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200A Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150W Derate Linearly Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W/°C Gate­to­Source Voltage, VGS . . . . . . . . . . . . . .

Specifications:

• Continuous Drain Current Id: 50 A
• Current Id Max: 50 A
• Drain Source Voltage Vds: 60 V
• Mounting Type: Through Hole
• Number of Pins: 3
• On State Resistance: 28 MOhm
• Package / Case: TO-220
• Power Dissipation Pd: 150 W
• Rds(on) Test Voltage Vgs: 10 V
• SVHC: No SVHC (15-Dec-2010)
• Transistor Case Style: TO-220
• Transistor Polarity: N Channel
• Voltage Vds Typ: 60 V
• Voltage Vgs Max: 4 V
• Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes