Datasheet NTE2970 - NTE Electronics N CHANNEL MOSFET, 500 V, 22 A, TO-3P

Detailed Description

Manufacturer: NTE Electronics

Description: N CHANNEL MOSFET, 500 V, 22 A, TO-3P

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Docket:
NTE2970 MOSFET N-Channel, Enhancement Mode High Speed Switch
Features: D Avalanche Rugged Technology D Rugged Gate Oxide Technology D Lower Input Capacitance D Improved Gate Charge D Extended Safe Operating Area D Lower Leakage Current D Lower RDS(ON) Applications: D SMPS D DC-DC Converter D Battery Charger D Power Supply of Printer D Copier D HDD, FDD, TV, VCR D Personal Computer
Absolute Maximum Ratings: Drain-Source Voltage, VDSS .

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V Drain Current, Continuous, ID TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22A TC = +100°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13.4A Drain Current, Pulsed (Note 1), IDM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Specifications:

• Continuous Drain Current Id: 22 A
• Drain Source Voltage Vds: 500 V
• On Resistance Rds(on): 290 MOhm
• Rds(on) Test Voltage Vgs: 30 V
• Threshold Voltage Vgs Typ: 4 V
• Transistor Polarity: N Channel

RoHS: Yes