Datasheet IXFV12N80PS - IXYS MOSFET, N, SMD, PLUS220

Detailed Description

Manufacturer: IXYS

Description: MOSFET, N, SMD, PLUS220

Specifications:

• Capacitance Ciss Typ: 3000 pF
• Continuous Drain Current Id: 12 A
• Drain Source Voltage Vds: 800 V
• Junction to Case Thermal Resistance A: 0.35°C/W
• Mounting Type: SMD
• N-channel Gate Charge: 50nC
• Number of Pins: 3
• On State Resistance: 850 MOhm
• Package / Case: PLUS220
• Power Dissipation Pd: 360 W
• Reverse Recovery Time trr Max: 250 ns
• Threshold Voltage Vgs Typ: 5 V
• Transistor Case Style: PLUS220
• Transistor Polarity: N Channel
• Transistor Type: High Performance (HiPerFET)
• Voltage Vds Typ: 800 V
• Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes