Datasheet IXFH22N60P - IXYS MOSFET, N, TO-247

IXYS IXFH22N60P

Part Number: IXFH22N60P

Detailed Description

Manufacturer: IXYS

Description: MOSFET, N, TO-247

Docket:
PolarHVTM HiPerFET Power MOSFETs
N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated
IXFH 22N60P IXFV 22N60P IXFV 22N60PS
VDSS = 600 V ID25 = 22 A RDS(on) 350 m trr 200 ns
TO-247 (IXFH) Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md FC Weight 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Mounting torque Mounting Force (TO-247) (PLUS220) Test Conditions TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 M Continuous Tranisent TC = 25° C TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C TC = 25° C IS IDM, di/dt 100 A/µs, VDD VDSS TJ 150° C, RG = 4 TC = 25° C Maximum Ratings 600 600 ±30 ±40 22 66 22 40 1.0 20 400 -55 ...

+150 150 -55 ... +150 300 260 V V V V A A A mJ J V/ns W °C °C °C °C °C

Specifications:

Capacitance Ciss Typ: 3600 pF
Continuous Drain Current Id: 22 A
Drain Source Voltage Vds: 600 V
Junction to Case Thermal Resistance A: 0.31°C/W
Mounting Type: Through Hole
N-channel Gate Charge: 58nC
Number of Pins: 3
On State Resistance: 350 MOhm
Package / Case: TO-247
Power Dissipation Pd: 400 W
Reverse Recovery Time trr Max: 200 ns
Threshold Voltage Vgs Typ: 5.5 V
Transistor Case Style: TO-247
Transistor Polarity: N Channel
Transistor Type: High Performance (HiPerFET)
Voltage Vds Typ: 600 V
Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes

Accessories:

Dow Corning - 2265931
Fischer Elektronik - FK 243 MI 247 O
Fischer Elektronik - WLK 5