Datasheet IXFR180N10 - IXYS MOSFET, N, ISOPLUS247

IXYS IXFR180N10

Part Number: IXFR180N10

Detailed Description

Manufacturer: IXYS

Description: MOSFET, N, ISOPLUS247

Docket:
HiPerFETTM Power MOSFETs IXFR 180N10 VDSS = 100 ISOPLUS247TM ID25 = 165
(Electrically Isolated Back Surface) Single MOSFET Die
Preliminary data
RDS(on) =
V A 8 mW

Specifications:

Capacitance Ciss Typ: 9400 pF
Continuous Drain Current Id: 165 A
Current Id Max: 165 A
Drain Source Voltage Vds: 100 V
Isolation Voltage: 2.5 kV
Mounting Type: Through Hole
N-channel Gate Charge: 65nC
Number of Pins: 3
On State Resistance: 8 MOhm
Operating Temperature Range: -55°C to +150°C
Package / Case: ISOPLUS-247
Power Dissipation Pd: 400 W
Pulse Current Idm: 720 A
Rds(on) Test Voltage Vgs: 10 V
Reverse Recovery Time trr Max: 250 ns
Rth: 0.3
Threshold Voltage Vgs Typ: 4 V
Transistor Case Style: ISOPLUS-247
Transistor Polarity: N Channel
Voltage Vds Typ: 100 V
Voltage Vgs Max: 20 V
Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes

Accessories:

Panasonic - EYGA091203SM
Panasonic - EYGA121807A