Datasheet BUK7535-55A - NXP MOSFET, N CH 55 V 35 A SOT78

Detailed Description

Manufacturer: NXP

Description: MOSFET, N CH 55 V 35 A SOT78

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Docket:
BUK7535-55A; BUK7635-55A
TrenchMOSTM standard level FET
Rev.

01 -- 10 November 2000 Product specification
1. Description
N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOSTM technology, featuring very low on-state resistance. Product availability: BUK7535-55A in SOT78 (TO-220AB) BUK7635-55A in SOT404 (D 2-PAK).

Specifications:

• Continuous Drain Current Id: 35 A
• Current Id Max: 35 A
• Drain Source Voltage Vds: 55 V
• Mounting Type: Through Hole
• Number of Pins: 3
• On State Resistance: 35 MOhm
• Operating Temperature Range: -55°C to +175°C
• Package / Case: SOT-78A
• Power Dissipation Pd: 85 W
• Rds(on) Test Voltage Vgs: 10 V
• SVHC: No SVHC (18-Jun-2010)
• Threshold Voltage Vgs Typ: 3 V
• Transistor Case Style: SOT-78A
• Transistor Polarity: N Channel
• Transistor Type: Enhancement
• Voltage Vds Typ: 55 V
• Voltage Vgs Max: 20 V
• Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes

Other Names:

BUK753555A, BUK7535 55A