Datasheet BUK9226-75A,118 - NXP MOSFET, N-CH, 75 V, 70 A, DPAK

Detailed Description

Manufacturer: NXP

Description: MOSFET, N-CH, 75 V, 70 A, DPAK

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Docket:
BUK9226-75A
TrenchMOSTM logic level FET
Rev.

01 -- 10 October 2000 Product specification
1. Description
N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOSTM1 technology, featuring very low on-state resistance. Product availability: BUK9226-75A in SOT428 (D-PAK).

Specifications:

• Continuous Drain Current Id: 45 A
• Current Id Max: 45 A
• Drain Source Voltage Vds: 75 V
• Number of Pins: 3
• On Resistance Rds(on): 20.9 MOhm
• Operating Temperature Range: -55°C to +175°C
• Power Dissipation: 114 W
• Rds(on) Test Voltage Vgs: 10 V
• SVHC: No SVHC (19-Dec-2011)
• Threshold Voltage Vgs Typ: 1.5 V
• Transistor Case Style: SOT-428
• Transistor Polarity: N Channel
• Transistor Type: Enhancement
• Voltage Vgs Max: 10 V

RoHS: Y-Ex

Other Names:

BUK922675A,118, BUK9226 75A,118, BUK9226-75A118, BUK9226-75A 118