Datasheet BUK9535-55A - NXP MOSFET, N CH 55 V 34 A SOT78

Detailed Description

Manufacturer: NXP

Description: MOSFET, N CH 55 V 34 A SOT78

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Docket:
Philips Semiconductors
Product specification
TrenchMOS transistor Logic level FET
GENERAL DESCRIPTION
N-channel enhancement mode logic level field-effect power transistor in a plastic envelope available in TO220AB and SOT404 .

Using 'trench' technology which features very low on-state resistance. It is intended for use in automotive and general purpose switching applications.

Specifications:

• Continuous Drain Current Id: 34 A
• Current Id Max: 34 A
• Drain Source Voltage Vds: 55 V
• Mounting Type: Through Hole
• Number of Pins: 3
• On State Resistance: 32 MOhm
• Operating Temperature Range: -55°C to +175°C
• Package / Case: SOT-78A
• Power Dissipation Pd: 85 W
• Rds(on) Test Voltage Vgs: 10 V
• SVHC: No SVHC (18-Jun-2010)
• Threshold Voltage Vgs Typ: 1.5 V
• Transistor Case Style: SOT-78A
• Transistor Polarity: N Channel
• Transistor Type: Enhancement
• Voltage Vds Typ: 55 V
• Voltage Vgs Max: 10 V
• Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes

Other Names:

BUK953555A, BUK9535 55A