Datasheet BUK9575-55A - NXP MOSFET, N CH 55 V 34 A SOT78

Detailed Description

Manufacturer: NXP

Description: MOSFET, N CH 55 V 34 A SOT78

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Docket:
BUK9575-55A; BUK9675-55A
TrenchMOSTM logic level FET
Rev.

01 -- 9 February 2001 Product specification
1. Description
N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOSTM technology, featuring very low on-state resistance. Product availability: BUK9575-55A in SOT78 (TO-220AB) BUK9675-55A in SOT404 (D 2-PAK).

Specifications:

• Continuous Drain Current Id: 20 A
• Current Id Max: 20 A
• Drain Source Voltage Vds: 55 V
• Mounting Type: Through Hole
• Number of Pins: 3
• On State Resistance: 68 MOhm
• Operating Temperature Range: -55°C to +175°C
• Package / Case: SOT-78A
• Power Dissipation Pd: 62 W
• Rds(on) Test Voltage Vgs: 10 V
• SVHC: No SVHC (18-Jun-2010)
• Threshold Voltage Vgs Typ: 1.5 V
• Transistor Case Style: SOT-78A
• Transistor Polarity: N Channel
• Transistor Type: Enhancement
• Voltage Vds Typ: 55 V
• Voltage Vgs Max: 10 V
• Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes

Other Names:

BUK957555A, BUK9575 55A