Datasheet PHT6N06T - NXP MOSFET, N, SOT-223

Detailed Description

Manufacturer: NXP

Description: MOSFET, N, SOT-223

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Docket:
PHT6N06T
TrenchMOSTM standard level FET
M3D087
Rev.

02 -- 03 February 2003
Product data

Simulation Model

Specifications:

• Continuous Drain Current Id: 2.5 A
• Current Id Max: 5.5 A
• Current Temperature: 25°C
• Drain Source Voltage Vds: 55 V
• Mounting Type: SMD
• Number of Pins: 3
• Number of Transistors: 1
• On State Resistance: 150 MOhm
• Operating Temperature Range: -55°C to +150°C
• Package / Case: SOT-223
• Power Dissipation Pd: 8.3 W
• Power Dissipation Ptot Max: 8.3 W
• Pulse Current Idm: 10 A
• Rds(on) Test Voltage Vgs: 10 V
• SVHC: No SVHC (18-Jun-2010)
• Threshold Voltage Vgs Typ: 3 V
• Transistor Case Style: SOT-223
• Transistor Polarity: N Channel
• Voltage Vds Typ: 55 V
• Voltage Vgs Max: 20 V
• Voltage Vgs Rds on Measurement: 5 V

RoHS: Yes