Datasheet PMV65XP,215 - NXP MOSFET P-CH 20 V 3.9 A SOT-23

Detailed Description

Manufacturer: NXP

Description: MOSFET P-CH 20 V 3.9 A SOT-23

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Docket:
PMV65XP
P-channel TrenchMOSTM extremely low level FET
Rev.

01 -- 28 September 2004 Product data sheet
1. Product profile
1.1 General description

Specifications:

• Continuous Drain Current Id: -2.8 A
• Current Id Max: -3.9 A
• Drain Source Voltage Vds: -20 V
• Mounting Type: SMD
• Number of Pins: 3
• On Resistance Rds(on): 76 MOhm
• Operating Temperature Range: -55°C to +150°C
• Package / Case: SOT-23
• Power Dissipation: 1.92 W
• Rds(on) Test Voltage Vgs: 4.5 V
• SVHC: No SVHC (19-Dec-2011)
• Threshold Voltage Vgs Typ: -750 mV
• Transistor Case Style: SOT-23
• Transistor Polarity: P Channel
• Transistor Type: Enhancement
• Voltage Vds Typ: -20 V
• Voltage Vgs Max: -750 mV
• Voltage Vgs Rds on Measurement: -4.5 V

RoHS: Yes

Other Names:

PMV65XP215, PMV65XP 215