Datasheet BSH103,215 - NXP MOSFET, N CH, 30 V, 850 mA, 3-SOT-23

Detailed Description

Manufacturer: NXP

Description: MOSFET, N CH, 30 V, 850 mA, 3-SOT-23

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Docket:
DISCRETE SEMICONDUCTORS
DATA SHEET
andbook, halfpage
M3D088
BSH103 N-channel enhancement mode MOS transistor

Specifications:

• Continuous Drain Current Id: 850 mA
• Drain Source Voltage Vds: 30 V
• On Resistance Rds(on): 400 MOhm
• Rds(on) Test Voltage Vgs: 4.5 V
• Threshold Voltage Vgs Typ: 400 mV
• Transistor Polarity: N Channel

RoHS: Yes

Other Names:

BSH103215, BSH103 215