Datasheet BSN20,215 - NXP MOSFET, N CH, 50 V, 173 mA, 3-SOT-23

Detailed Description

Manufacturer: NXP

Description: MOSFET, N CH, 50 V, 173 mA, 3-SOT-23

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Docket:
BSN20
N-channel enhancement mode field-effect transistor
Rev.

03 -- 26 June 2000 Product specification
1. Description
N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOSTM1 technology. Product availability: BSN20 in SOT23.

Specifications:

• Continuous Drain Current Id: 173 mA
• Drain Source Voltage Vds: 50 V
• On Resistance Rds(on): 2.8 Ohm
• Rds(on) Test Voltage Vgs: 10 V
• Threshold Voltage Vgs Typ: 1 V
• Transistor Polarity: N Channel

RoHS: Yes

Other Names:

BSN20215, BSN20 215