Datasheet PHT8N06LT,135 - NXP MOSFET, N CH, 55 V, 7.5 A, 4-SOT-223

Detailed Description

Manufacturer: NXP

Description: MOSFET, N CH, 55 V, 7.5 A, 4-SOT-223

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Docket:
Philips Semiconductors
Product specification
TrenchMOSTM transistor Logic level FET
GENERAL DESCRIPTION
N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting.

The device features very low on-state resistance and has integral zener diodes giving ESD protection. It is intended for use in DC-DC converters and general purpose switching applications.

Specifications:

• Continuous Drain Current Id: 7.5 A
• Drain Source Voltage Vds: 55 V
• On Resistance Rds(on): 65 MOhm
• Rds(on) Test Voltage Vgs: 5 V
• Threshold Voltage Vgs Typ: 1.5 V
• Transistor Polarity: N Channel

RoHS: Yes

Accessories:

• WAKEFIELD SOLUTIONS - 217-36CTRE6

Other Names:

PHT8N06LT135, PHT8N06LT 135