Datasheet PMV31XN,215 - NXP MOSFET, N CH, 20 V, 5.9 A, 3-SOT-23

Detailed Description

Manufacturer: NXP

Description: MOSFET, N CH, 20 V, 5.9 A, 3-SOT-23

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Docket:
PMV31XN
µTrenchMOSTM extremely low level FET
Rev.

01 -- 26 February 2003 Product data
1. Description
N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOSTM technology. Product availability: PMV31XN in SOT23.

Specifications:

• Continuous Drain Current Id: 5.9 A
• Drain Source Voltage Vds: 20 V
• On Resistance Rds(on): 31 MOhm
• Rds(on) Test Voltage Vgs: 4.5 V
• Threshold Voltage Vgs Typ: 1.5 V
• Transistor Polarity: N Channel

RoHS: Yes

Other Names:

PMV31XN215, PMV31XN 215