Datasheet NID5004NT4G - ON Semiconductor SMART MOSFET, N, 36 V, 2.5 W, D-PAK

Detailed Description

Manufacturer: ON Semiconductor

Description: SMART MOSFET, N, 36 V, 2.5 W, D-PAK

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Docket:
NID5004N Self-Protected FET with Temperature and Current Limit
40 V, 6.5 A, Single N-Channel, DPAK
Self­protected FETs are a series of power MOSFETs which utilize ON Semiconductor HDPlust technology.

The self­protected MOSFET incorporates protection features such as integrated thermal and current limits. The self-protected MOSFETs include an integrated Drain-to-Gate Clamp that provides overvoltage protection from transients and avalanche. The device is protected from Electrostatic Discharge (ESD) by utilizing an integrated Gate-to-Source Clamp.
Features
VDSS (Clamped) 40 V

Specifications:

• Avalanche Single Pulse Energy Eas: 273mJ
• Clamping Voltage Vc Max: 44 V
• Continuous Drain Current Id: 6.5 A
• Current Id Max: 6.5 A
• Drain Source Voltage Vds: 40 V
• Mounting Type: SMD
• Number of Pins: 3
• On State Resistance: 110 MOhm
• Operating Temperature Range: -55°C to +150°C
• Package / Case: DPAK
• Pin Configuration: 1(G), 2(D), 3(S)
• Power Dissipation Pd: 1.3 W
• Rds(on) Test Voltage Vgs: 10 V
• SVHC: No SVHC (15-Dec-2010)
• Shutdown Temperature: 200°C
• Threshold Voltage Vgs Typ: 1.85 V
• Transistor Case Style: D-PAK
• Transistor Polarity: N Channel
• Voltage Vds Typ: 40 V
• Voltage Vgs Max: 14 V DC
• Voltage Vgs Rds on Measurement: 10 V
• Voltage Vgs th Max: 2.2 V
• Voltage Vgs th Min: 1 V

RoHS: Yes

Accessories:

• Fischer Elektronik - FK 244 08 D PAK
• Fischer Elektronik - FK 244 13 D PAK
• Fischer Elektronik - WLK 5