Datasheet NTD20N03L27G - ON Semiconductor MOSFET, N, D-PAK

Detailed Description

Manufacturer: ON Semiconductor

Description: MOSFET, N, D-PAK

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Docket:
NTD20N03L27 Power MOSFET
20 Amps, 30 Volts, N-Channel DPAK
This logic level vertical power MOSFET is a general purpose part that provides the "best of design" available today in a low cost power package.

Avalanche energy issues make this part an ideal design in. The drain-to-source diode has a ideal fast but soft recovery.
Features
http://onsemi.com

Simulation Model

Specifications:

• Avalanche Single Pulse Energy Eas: 288mJ
• Continuous Drain Current Id: 20 A
• Current Id Max: 20 A
• Drain Source Voltage Vds: 30 V
• Junction to Case Thermal Resistance A: 1.67°C/W
• Mounting Type: SMD
• Number of Pins: 3
• On State Resistance: 27 MOhm
• Package / Case: DPAK
• Power Dissipation Pd: 74 W
• Pulse Current Idm: 60 A
• Rds(on) Test Voltage Vgs: 5 V
• SVHC: No SVHC (15-Dec-2010)
• Threshold Voltage Vgs Typ: 1.6 V
• Transistor Case Style: D-PAK
• Transistor Polarity: N Channel
• Voltage Vds Typ: 30 V
• Voltage Vgs Max: 1.6 V
• Voltage Vgs Rds on Measurement: 5 V
• Voltage Vgs th Max: 2 V
• Voltage Vgs th Min: 1 V

RoHS: Y-Ex

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