Datasheet STB12NM50N - STMicroelectronics MOSFET, N, D2-PAK
Part Number: STB12NM50N
Detailed Description
Manufacturer: STMicroelectronics
Description: MOSFET, N, D2-PAK
Docket:
STB12NM50N - STD12NM50N STF12NM50N - STP12NM50N
N-channel 500V - 0.29 - 11A - TO-220 /FP- D2PAK - DPAK Second generation MDmeshTM Power MOSFET
General features
Type STB12NM50N STD12NM50N STF12NM50N STP12NM50N
VDSS (@Tjmax) 550V 550V 550V 550V
Specifications:
- Avalanche Single Pulse Energy Eas: 350mJ
- Capacitance Ciss Typ: 880 pF
- Continuous Drain Current Id: 11 A
- Current Iar: 5 A
- Current Id Max: 11 A
- Drain Source Voltage Vds: 550 V
- Junction Temperature Tj Max: 150°C
- Junction Temperature Tj Min: -55°C
- Mounting Type: SMD
- Number of Pins: 3
- On State Resistance: 380 MOhm
- On State resistance @ Vgs = 10V: 380 MOhm
- Package / Case: D2-PAK
- Power Dissipation Pd: 100 W
- Pulse Current Idm: 44 A
- Rate of Voltage Change dv / dt: 15V/ns
- Rds(on) Test Voltage Vgs: 10 V
- SVHC: No SVHC (15-Dec-2010)
- Threshold Voltage Vgs Typ: 3 V
- Transistor Case Style: D2-PAK
- Transistor Polarity: N Channel
- Voltage Vds Typ: 500 V
- Voltage Vgs Max: 25 V
- Voltage Vgs Rds on Measurement: 10 V
- Voltage Vgs th Max: 4 V
- Voltage Vgs th Min: 2 V
RoHS: Yes
Accessories:
- Fischer Elektronik - FK 244 08 D2 PAK
- Fischer Elektronik - FK 244 13 D2 PAK
- Fischer Elektronik - WLK 5