Datasheet 2SK3767 - Toshiba MOSFET, N, 600 V, TO-220SIS

Detailed Description

Manufacturer: Toshiba

Description: MOSFET, N, 600 V, TO-220SIS

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Docket:
2SK3767
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSVI)
2SK3767
Switching Regulator Applications
· · · · Low drain-source ON resistance: RDS (ON) = 3.3 (typ.) High forward transfer admittance: |Yfs| = 1.6S (typ.) Low leakage current: IDSS = 100A (VDS = 600 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm

Specifications:

• Continuous Drain Current Id: 2 A
• Current Id Max: 2 A
• Drain Source Voltage Vds: 600 V
• Mounting Type: Through Hole
• Number of Pins: 3
• On State Resistance: 4.5 Ohm
• Package / Case: TO-220SIS
• Power Dissipation Pd: 25 W
• Pulse Current Idm: 5 A
• Rds(on) Test Voltage Vgs: 10 V
• Threshold Voltage Vgs Typ: 4 V
• Transistor Case Style: TO-220SIS
• Transistor Polarity: N Channel
• Voltage Vds Typ: 600 V
• Voltage Vgs Max: 30 V
• Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes

Accessories:

• Fischer Elektronik - SK 145/37,5 STS-220
• Fischer Elektronik - SK 409/25,4 STS
• Fischer Elektronik - SK 409/50,8 STS